Raman scattering study of GeSn under ?1 0 0? and ?1 1 0? uniaxial stress
نویسندگان
چکیده
The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, lack coefficient makes it difficult accurate determination in alloys. Here, we have investigated Raman-strain function Ge1-xSnxalong ?1 0 0? 1 directions. nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate substrates. External introduced by bending fixtures radii, leading to uniaxial tensile up 0.44%. Strain analysis flexible NMs bent along directions performed spectroscopy. linear coefficients Ge0.96Sn0.04are measured be -1.81 -2.60 cm-1, while those Ge0.94Sn0.06are decreased -2.69 -3.82 cm-1along directions, respectively. As result, experimental ratio (ROLC) Ge, Ge0.96Sn0.04and 1.34, 1.44 1.42, which agree well theoretical ROLC values calculated elastic compliances phonon deformation potentials (PDPs). In addition, compositional dependence PDPs analyzed qualitatively. These fundamental parameters important designing high performance strained
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2021
ISSN: ['1361-6528', '0957-4484']
DOI: https://doi.org/10.1088/1361-6528/ac03d7